Pseudo SRAM

Part No.	W966D6E
Datasheet	N/A
Description	The W966D6E is a 64M byte'CMOS pseudo-static random access memories developed for low-power'portable applications'organized as 4 Meg x 16 bits. Develop for low power'portable application.
Features	Supports asynchronous and burst operations VCC'VCCQ Voltages:1.7V'1.95V VCC'1.7V'1.95V VCCQ Random access time: 70ns Burst mode READ and WRITE access: 4'8'16'or 32 words'or continuous burst Burst wrap or sequential'Max clock rate: 133 MHz (tCLK = 7.5ns) On-chip temperature compensated refresh (TCR) Partial array refresh (PAR) Deep power-down (DPD) mode Operating temperature rang: -30C~85C
Diagram	N/A
Package	N/A
Other Files	N/A
Development Tools	N/A
Others	N/A