Pseudo SRAM
| Part No. |
W956D6D |
| Datasheet |
Contact us: PSRAM@winbond.com |
| Description |
The W966D6D is a 64M byte'CMOS pseudo-static random access memories developed for low-power'portable applications'organized as 4 Meg x 16 bits. Support A/D MUX (Address/Data bus multiplex) interface to reduce I/O pin numbers. |
| Features |
- VCC'VCCQ Voltages:1.7V'1.95V VCC'1.7V'1.95V VCCQ
- Random access time: 70ns
- Burst mode READ and WRITE access:
- 4'8'16'or 32 words'or continuous burst
- Burst wrap or sequential'Max clock rate: 133 MHz (tCLK = 7.5ns)
- A/D MUX
- On-chip temperature compensated refresh (TCR)
- Partial array refresh (PAR)
- Deep power-down (DPD) mode
- Operating temperature rang: -30C~85C
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| Diagram |
N/A |
| Package |
N/A |
| Other Files |
N/A |
| Development Tools |
Verilog model Contact us: PSRAM@winbond.com |
| Others |
N/A |
Contact us: PSRAM@winbond.com