Low Power DDR SDRAM

Part No.	W947D6HB
Datasheet	W947D6HB _ W947D2HB_ A01_003.pdf
Description	This is a 128Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 16bits
Features	Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Programmable output buffer driver strength Four internal banks for concurrent operation CAS Latency: 2 and 3 Burst Length: 2、4 、8 and 16 Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C) Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Diagram	N/A
Package	60VFBGA(8x9x1.0mm), RoHS compliant
Other Files	N/A
Development Tools	N/A
Others	KGD contact LPDRAM@winbond.com